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Slow Positron Beam Investigations of Defects Caused by B+ Implantation into Epitaxial 6H-SiC

Journal Materials Science Forum (Volumes 445 - 446)
Volume Positron Annihilation - ICPA-13
Edited by Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages 36-38
DOI 10.4028/www.scientific.net/MSF.445-446.36
Online since January, 2004
Authors W. Anwand, Gerhard Brauer, Jan Kuriplach, Wolfgang Skorupa
Keywords 6H-SiC, B+ Implantation, Boron Precipitates, Defect Annealing, Slow Positron Implantation Spectroscopy, Vacancy Type Defects
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