Paper Title:
Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 445-446)
Edited by
Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages
78-80
DOI
10.4028/www.scientific.net/MSF.445-446.78
Citation
M. Fujinami, T. Miyagoe, T. Sawada, R. Suzuki, T. Ohdaira, T. Akahane, "Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam", Materials Science Forum, Vols. 445-446, pp. 78-80, 2004
Online since
January 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: W.G. Hu, Z. Wang, Y.Q. Dai, Shao Jie Wang, Y.W. Zhao
114
Authors: T. Miyagoe, Masanori Fujinami, Tsuguo Sawada, Ryoichi Suzuki, Toshiyuki Ohdaira, Takashi Akahane
150
Authors: Fuminobu Hori, Eiichi Kuramoto, Taro Araki, Ryuichiro Oshima
189
Authors: W. Anwand, A. Kanjilal, G. Brauer, A. Wagner, M. Butterling, T.E. Cowan, L. Rebohle, W. Skorupa
Abstract:Electroluminescence in SiO2 layers can be created by Ge implantation and a subsequent heat treatment, leading to the formation of Ge...
41
Authors: Wolfgang Anwand, Gerhard Brauer, Maik Butterling, Hans Rainer Kissener, Andreas Wagner
II. Positron Beams and Advanced Techniques
Abstract:On the basis of the design and construction of the slow positron beam SPONSOR at the Helmholtz-Centre Dresden-Rossendorf an example is given...
25