Paper Title:
Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions
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Periodical
Materials Science Forum (Volumes 445-446)
Edited by
Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages
93-95
DOI
10.4028/www.scientific.net/MSF.445-446.93
Citation
P. M. Gordo, L. Liszkay, K. Havancsák, V.A. Skuratov, P. Sperr, W. Egger, C. Lopes Gil, A. P. de Lima, Z. Kajcsos, "Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions", Materials Science Forum, Vols. 445-446, pp. 93-95, 2004
Online since
January 2004
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