Paper Title:
Structure Dependent Oxidation of Al Thin Films for MTJ Tunnel Barrier
  Abstract

Magnetic tunnel junctions(MTJ) are fabricated as a function of the input power of Al thin film. Al thin films have pseudo-crystalline structure at 30, 60, 90 W and transform into amorphous like smooth nanocrystalline state at 120 W. Junction resistance increases as the annealing temperature increases up to 250 􀀀 and decrease at 300 􀀀 at the pseudo-crystalline barrier. When the barrier has amorphous like nanocrystalline structure, optimum annealing temperature increases up to 300 􀀀 . The barrier characteristics are strongly related with the microstructure of AlOx barrier.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
1053-1056
DOI
10.4028/www.scientific.net/MSF.449-452.1053
Citation
Y.W. Lee, S.M. Yoon, J.J. Lim, Y. Hu, C. G. Kim, C. O. Kim, "Structure Dependent Oxidation of Al Thin Films for MTJ Tunnel Barrier", Materials Science Forum, Vols. 449-452, pp. 1053-1056, 2004
Online since
March 2004
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Price
$32.00
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