Anisotropy magneto-resistance and planar Hall-effect of ferromagnetic GaMnAs epitaxial films were investigated. The films were grown on 2 o off-cut GaAs (001) substrate in an optimized growth condition via low temperature molecular beam epitaxy. The GaMnAs layer revealed an easy axis along the (2x4) reconstruction direction of the substrate or along the off-cut direction. The large value of the anisotropy magneto-resistance ratio of ~7 % was realized by a well-alignment of the easy axis of the homogeneous ferromagnetic GaMnAs layer with the current. It also gives a very high planar Hall resistance ratio of ~500 %.