Paper Title:
Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction
  Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
1081-1084
DOI
10.4028/www.scientific.net/MSF.449-452.1081
Citation
W. J. Hwang, H.J. Lee, K.I. Lee, J.M. Lee, J.Y. Chang, S.H. Han, Y.K. Kim, W.Y. Lee, M. W. Shin, "Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction", Materials Science Forum, Vols. 449-452, pp. 1081-1084, 2004
Online since
March 2004
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