Paper Title:
Vertical Etching of Ru Electrodes Using the O2/Cl2 System
  Abstract

In this study, the etching characteristics of ruthenium (Ru) electrode using O2/Cl2 helicon plasmas were investigated. The variation of Ru etch rate, Ru to SiO2 etch selectivity and Ru etching slope with varied process variables were scrutinized. Not only the gas chemistry affected the Ru etching, but also the higher bias power and argon (Ar) bombardment helped to faciliate the Ru etching.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
357-360
DOI
10.4028/www.scientific.net/MSF.449-452.357
Citation
H. W. Kim, "Vertical Etching of Ru Electrodes Using the O2/Cl2 System", Materials Science Forum, Vols. 449-452, pp. 357-360, 2004
Online since
March 2004
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