Paper Title:
Preparation and Characterization of IZO Transparent Conducting Films by the Sol-Gel Method
  Abstract

Indium-zinc oxide (IZO), with Zn/(Zn+In)=0.33 - 0.78, films were deposited by the sol-gel method. Effects of Zn/(Zn+In) atomic ratio and annealing temperature on the structural, electrical and optical properties of IZO thin film were investigated. Films of Zn/(Zn+In)=0.33 prepared at 600°C had the lowest resistivity value, 4.48X10 -2 Ω cm (carrier concentration=3.83X 1018 cm-3 and mobility=25.54 cm2/Vs), and the structure of these films matched that of Zn2In2O5 film. Average optical transmittances of all films were above 80% in the visible range. The highest average transmittance was observed at Zn/(Zn+In)=0.5, with 86.8% in the visible range.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
469-472
DOI
10.4028/www.scientific.net/MSF.449-452.469
Citation
C. H. Kim, J. H. Lee, B. O. Park, "Preparation and Characterization of IZO Transparent Conducting Films by the Sol-Gel Method", Materials Science Forum, Vols. 449-452, pp. 469-472, 2004
Online since
March 2004
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Price
$32.00
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