Paper Title:
Epitaxial Growth of Mn-Doped ZnO Thin Films on Al2O3 (0001)
  Abstract

Growth behavior of Mn-doped ZnO thin films (Zn1-xMnxO) onAl2O3 (0001) substrates by pulsed laser deposition was investigated as a function of Mn content (0.00≤x≤0.35) mainly using synchrotron x-ray diffraction. We found that a small amount of Mn doping (x=0.05) significantly improves the crystalline quality, and also leads to a singly oriented film. The superior epitaxial growth of the film with an optimum Mn content seems to be associated with its microstructural evolution.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
493-496
DOI
10.4028/www.scientific.net/MSF.449-452.493
Citation
V. Vaithianathan, J. H. Je, B. T. Lee, S. S. Kim, "Epitaxial Growth of Mn-Doped ZnO Thin Films on Al2O3 (0001)", Materials Science Forum, Vols. 449-452, pp. 493-496, 2004
Online since
March 2004
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