Paper Title:
Direct Growth of SiC Nanorods on Si Using APCVD and Single Precursors
  Abstract

SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ~ 60nm diameters and lengths of several micrometers. Nanorod.s diameters and lengths were different by kind of catalysts. Nanorod.s growth scheme was divided by two regions with diameter.s variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod.s diameters and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
701-704
DOI
10.4028/www.scientific.net/MSF.449-452.701
Citation
D. Rho, J. S. Kim, D. J. Byun, J. W. Yang, J. G. Jhin, N. Kim, "Direct Growth of SiC Nanorods on Si Using APCVD and Single Precursors", Materials Science Forum, Vols. 449-452, pp. 701-704, 2004
Online since
March 2004
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