Paper Title:
High Temperature Oxidation Mechanism of TiAl-W-Si Alloys
  Abstract

The oxidation of Ti-(43~52%)Al-2%W-(0~0.5%)Si alloys between 900 and 1050°C in air progressed via the outward diffusion of Ti ions to form the outer TiO2 layer, and the inward transport of oxygen to form the inner (TiO2+Al2O3) mixed layer, between which the intermediate Al2O3 barrier layer existed. Tungsten tended to diffuse inward to be incorporated below the intermediate Al2O3 layer, while Si outward to exist over the entire oxide layer. Both W and Si tended to be dissolved in the oxide layer, rather than forming independent oxides.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
817-820
DOI
10.4028/www.scientific.net/MSF.449-452.817
Citation
D. B. Lee, S. W. Woo, "High Temperature Oxidation Mechanism of TiAl-W-Si Alloys", Materials Science Forum, Vols. 449-452, pp. 817-820, 2004
Online since
March 2004
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Price
$32.00
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