Paper Title:
Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs
  Abstract

Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In both ohmic contacts, low-resistance and non-spiking planar interfaces were obtained by rapid thermal annealing. RF performance of the AlGaAs/GaAs HBT was also examined by employing these contact systems.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
921-924
DOI
10.4028/www.scientific.net/MSF.449-452.921
Citation
I. H. Kim, "Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs", Materials Science Forum, Vols. 449-452, pp. 921-924, 2004
Online since
March 2004
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