Paper Title:
White Light Emitting Diodes of GaN-Based Sr2SiO4:Eu and the Luminescent Properties
  Abstract

We have synthesized a Eu2+-activated Sr2SiO4yellow phosphor and investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (400 nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
953-956
DOI
10.4028/www.scientific.net/MSF.449-452.953
Citation
J.K. Park, C. H. Kim, K. J. Choi, H.D. Park, S. Y. Choi, "White Light Emitting Diodes of GaN-Based Sr2SiO4:Eu and the Luminescent Properties ", Materials Science Forum, Vols. 449-452, pp. 953-956, 2004
Online since
March 2004
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