Paper Title:
Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters
  Abstract

Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
97-100
DOI
10.4028/www.scientific.net/MSF.449-452.97
Citation
J. Y. Kim, B. W. Lee, H. S. Nam, D. I. Kwon, "Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters", Materials Science Forum, Vols. 449-452, pp. 97-100, 2004
Online since
March 2004
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Chapter 3: Optics and Solar Materials
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