Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters |
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| Journal | Materials Science Forum (Volumes 449 - 452) |
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| Volume | Designing, Processing and Properties of Advanced Engineering Materials |
| Edited by | S.-G. Kang and T. Kobayashi |
| Pages | 97-100 |
| DOI | 10.4028/www.scientific.net/MSF.449-452.97 |
| Citation | Ju Young Kim et al., 2004, Materials Science Forum, 449-452, 97 |
| Online since | March, 2004 |
| Authors | Ju Young Kim, Baik Woo Lee, Ho Seok Nam, Dong Il Kwon |
| Keywords | Amorphous Silicon Carbide, Incident Energy, Molecular Dynamic Simulation, Substrate Temperature |
| Abstract | Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed. |
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