Paper Title:
Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator
  Abstract

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
977-980
DOI
10.4028/www.scientific.net/MSF.449-452.977
Citation
S.G. Kim, S. B. Jung, J. H. Oh, H.J. Kim, Y. H. Shin, "Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator", Materials Science Forum, Vols. 449-452, pp. 977-980, 2004
Online since
March 2004
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