Paper Title:
Properties of Tin Oxide Films Prepared by MOCVD
  Abstract

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.

  Info
Periodical
Materials Science Forum (Volumes 449-452)
Edited by
S.-G. Kang and T. Kobayashi
Pages
997-1000
DOI
10.4028/www.scientific.net/MSF.449-452.997
Citation
G. P. Choi, Y. J. Park, W. S. Noh, J. S. Park, "Properties of Tin Oxide Films Prepared by MOCVD", Materials Science Forum, Vols. 449-452, pp. 997-1000, 2004
Online since
March 2004
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Price
$32.00
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