Paper Title:
MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
  Abstract

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Periodical
Materials Science Forum (Volumes 455-456)
Edited by
Rodrigo Martins, Elvira Fortunator, Isabel Ferreira, Carlos Dias
Pages
73-76
DOI
10.4028/www.scientific.net/MSF.455-456.73
Citation
H. Águas, L. Pereira, L. Raniero, E. Fortunato, R. Martins, "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge", Materials Science Forum, Vols. 455-456, pp. 73-76, 2004
Online since
May 2004
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