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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

• Papers
• Abstracts

• p4 Committees   [ 40 K ]
• p5 Preface   [ 29 K ]
• p3 Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances   [ 1 M ]
  Authors: H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr.
• p9 SiC Crystal Growth by HTCVD   [ 692 K ]
  Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, J. Peder Bergman, Erik Janzén, A. Vehanen
• p15 Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors   [ 68 K ]
  Authors: Chris G. Van de Walle
• p21 Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors   [ 227 K ]
  Authors: Hiromichi Ohashi
• p29 High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment   [ 796 K ]
  Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai
• p35 Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices   [ 227 K ]
  Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.
• p41 Large Diameter 4H-SiC Substrates for Commercial Power Applications   [ 8 M ]
  Authors: Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr.
• p47 Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique   [ 3 M ]
  Authors: Taro Nishiguchi, Mitsutaka Nakamura, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
• p51 Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals   [ 131 K ]
  Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez
• p55 Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide   [ 698 K ]
  Authors: Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri N. Makarov
• p59 Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon   [ 91 K ]
  Authors: V.G. Sevastyanov, Yu S. Ezhov, E.P. Simonenko, N.T. Kuznetsov
• p63 Faceted Growth of SiC Bulk Crystals   [ 349 K ]
  Authors: I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, H. Helava, Yuri N. Makarov
• p67 Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth   [ 303 K ]
  Authors: A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, M.S. Ramm, Yuri N. Makarov