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Silicon Carbide and Related Materials 2003

Volumes 457 - 460
doi: 10.4028/www.scientific.net/MSF.457-460
Paper Titles published in this Main Theme:
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Paper Title Page

Committees

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Preface

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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

Authors: H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr.

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SiC Crystal Growth by HTCVD

Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, Peder Bergman, Erik Janzén, A. Vehanen

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Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors

Authors: Chris G. Van de Walle

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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors

Authors: Hiromichi Ohashi

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High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.

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Large Diameter 4H-SiC Substrates for Commercial Power Applications

Authors: Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr.

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Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique

Authors: Taro Nishiguchi, Mitsutaka Nakamura, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

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