Silicon Carbide and Related Materials 2003
Materials Science Forum Volumes 457 - 460
doi:10.4028/www.scientific.net/MSF.457-460
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p4
Committees
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40 K
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p5
Preface
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29 K
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p3
Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
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1 M
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Authors: H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr.
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p9
SiC Crystal Growth by HTCVD
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692 K
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Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, J. Peder Bergman, Erik Janzén, A. Vehanen
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p15
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
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68 K
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Authors: Chris G. Van de Walle
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p21
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
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227 K
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Authors: Hiromichi Ohashi
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p29
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
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796 K
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Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai
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p35
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
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227 K
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Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.
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p41
Large Diameter 4H-SiC Substrates for Commercial Power Applications
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8 M
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Authors: Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr.
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p47
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
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3 M
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Authors: Taro Nishiguchi, Mitsutaka Nakamura, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
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p51
Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
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131 K
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Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez
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p55
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
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698 K
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Authors: Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri N. Makarov
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p59
Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
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91 K
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Authors: V.G. Sevastyanov, Yu S. Ezhov, E.P. Simonenko, N.T. Kuznetsov
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p63
Faceted Growth of SiC Bulk Crystals
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349 K
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Authors: I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, H. Helava, Yuri N. Makarov
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p67
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
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303 K
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Authors: A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, M.S. Ramm, Yuri N. Makarov