Silicon Carbide and Related Materials 2003
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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances Authors: H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr. |
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Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, Peder Bergman, Erik Janzén, A. Vehanen |
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Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors Authors: Chris G. Van de Walle |
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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors Authors: Hiromichi Ohashi |
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High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai |
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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr. |
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Large Diameter 4H-SiC Substrates for Commercial Power Applications Authors: Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr. |
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Authors: Taro Nishiguchi, Mitsutaka Nakamura, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino |
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