Paper Title:
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1001-1004
DOI
10.4028/www.scientific.net/MSF.457-460.1001
Citation
D. H. Kim, H. J. Na, S. Y. Jung, I. B. Song, M. Y. Um, H. K. Song, J. K. Jeong, J. B. Lee, H. J. Kim, "Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments", Materials Science Forum, Vols. 457-460, pp. 1001-1004, 2004
Online since
June 2004
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