Paper Title:
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1005-1008
DOI
10.4028/www.scientific.net/MSF.457-460.1005
Citation
G. Sarov, T. Cholakova, R. Kakanakov, "P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching", Materials Science Forum, Vols. 457-460, pp. 1005-1008, 2004
Online since
June 2004
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