Paper Title:
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1009-1012
DOI
10.4028/www.scientific.net/MSF.457-460.1009
Citation
Y. Tanaka, T. Ohno, N. Oyanagi, S. I. Nishizawa, T. Suzuki, K. Fukuda, T. Yatsuo, K. Arai, "Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate", Materials Science Forum, Vols. 457-460, pp. 1009-1012, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Francesco La Via, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Francesco Moscatelli, Andrea Scorzoni, G.C. Cardinali
827
Authors: Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Stephan G. Müller, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.
1113
Authors: Koji Nakayama, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura
Abstract:Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC...
1359
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...
893