Paper Title:
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1025-1028
DOI
10.4028/www.scientific.net/MSF.457-460.1025
Citation
M. Lazar, G.C. Cardinali, C. Raynaud, A. Poggi, D. Planson, R. Nipoti, J.-P. Chante, "The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study ", Materials Science Forum, Vols. 457-460, pp. 1025-1028, 2004
Online since
June 2004
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