Paper Title:
4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1041-1044
DOI
10.4028/www.scientific.net/MSF.457-460.1041
Citation
G. H. Song, H. W. Kim, W. Bahng, S. C. Kim, N. K. Kim, "4H-SiC p-n Diode using Internal Ring (IR) Termination Technique", Materials Science Forum, Vols. 457-460, pp. 1041-1044, 2004
Online since
June 2004
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Price
$32.00
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