Paper Title:
Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1049-1052
DOI
10.4028/www.scientific.net/MSF.457-460.1049
Citation
Y. Yamamoto, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki, "Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties", Materials Science Forum, Vols. 457-460, pp. 1049-1052, 2004
Online since
June 2004
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