Paper Title:
The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1053-1056
DOI
10.4028/www.scientific.net/MSF.457-460.1053
Citation
A. Hefner, T. McNutt, D. Berning, R. Singh, A. Akuffo, "The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes", Materials Science Forum, Vols. 457-460, pp. 1053-1056, 2004
Online since
June 2004
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