Paper Title:
High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1061-1064
DOI
10.4028/www.scientific.net/MSF.457-460.1061
Citation
D. J. Spry, A. J. Trunek, P. G. Neudeck, "High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas", Materials Science Forum, Vols. 457-460, pp. 1061-1064, 2004
Online since
June 2004
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