High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1061-1064 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1061 |
| Citation |
David J. Spry et al., 2004, Materials Science Forum, 457-460, 1061 |
| Online since |
June, 2004 |
| Authors |
David J. Spry, Andrew J. Trunek, Philip G. Neudeck |
| Keywords |
3C-SiC, 4H-SiC, Breakdown Electric Field, Schottky Diode, Step-Free Surface |
| Full Paper |
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