Paper Title:
Avalanche Multiplication and Breakdown in 4H-SiC Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1069-1072
DOI
10.4028/www.scientific.net/MSF.457-460.1069
Citation
B.K. Ng, J.P.R. David, D.J. Massey, R.C. Tozer, G.J. Rees, F. Yan, J. H. Zhao, M. Weiner, "Avalanche Multiplication and Breakdown in 4H-SiC Diodes", Materials Science Forum, Vols. 457-460, pp. 1069-1072, 2004
Online since
June 2004
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