Paper Title:
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
107-110
DOI
10.4028/www.scientific.net/MSF.457-460.107
Citation
T. Furusho, H. Takagi, S. Ota, H. Shiomi, S. Nishino, "Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis", Materials Science Forum, Vols. 457-460, pp. 107-110, 2004
Online since
June 2004
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