Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
107-110 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.107 |
| Citation |
Tomoaki Furusho et al., 2004, Materials Science Forum, 457-460, 107 |
| Online since |
June, 2004 |
| Authors |
Tomoaki Furusho, H. Takagi, S. Ota, Hiromu Shiomi, Shigehiro Nishino |
| Keywords |
4H-SiC {03-38}, Micropipe, Stacking Fault, Sublimation Growth |
| Full Paper |
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