Paper Title:
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1085-1088
DOI
10.4028/www.scientific.net/MSF.457-460.1085
Citation
S. Izumi, I. Kamata, T. Tawara, H. Fujisawa, H. Tsuchida, "Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties ", Materials Science Forum, Vols. 457-460, pp. 1085-1088, 2004
Online since
June 2004
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