High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1105-1108 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1105 |
| Citation |
Mrinal K. Das et al., 2004, Materials Science Forum, 457-460, 1105 |
| Online since |
June, 2004 |
| Authors |
Mrinal K. Das, Joseph J. Sumakeris, Michael J. Paisley, Adrian R. Powell |
| Keywords |
Forward Voltage Drift, Junction Termination Extension (JTE), PiN Diode |
| Full Paper |
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