Paper Title:

4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1109-1112
DOI 10.4028/www.scientific.net/MSF.457-460.1109
Citation J. Wu et al., 2004, Materials Science Forum, 457-460, 1109
Online since June, 2004
Authors J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao
Keywords 4H-SiC, MPS Diode, PiN Diode, Schottky Diode
Price US$ 28,-
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