Paper Title:
4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1109-1112
DOI
10.4028/www.scientific.net/MSF.457-460.1109
Citation
J. Wu, L. Fursin, Y. Z. Li, P. Alexandrov, J. H. Zhao, "4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer", Materials Science Forum, Vols. 457-460, pp. 1109-1112, 2004
Online since
June 2004
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