Paper Title:
4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1109-1112 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1109 |
| Citation |
J. Wu et al., 2004, Materials Science Forum, 457-460, 1109 |
| Online since |
June, 2004 |
| Authors |
J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao |
| Keywords |
4H-SiC, MPS Diode, PiN Diode, Schottky Diode |
| Price |
US$ 28,- |