Paper Title:
Extrinsic Base Design of SiC Bipolar Transistors
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1117-1120
DOI
10.4028/www.scientific.net/MSF.457-460.1117
Citation
E. Danielsson, M. Domeij, C. M. Zetterling, M. Östling, A. Schöner, "Extrinsic Base Design of SiC Bipolar Transistors", Materials Science Forum, Vols. 457-460, pp. 1117-1120, 2004
Online since
June 2004
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