Paper Title:
Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1121-1124
DOI
10.4028/www.scientific.net/MSF.457-460.1121
Citation
I. Perez-Wurfl, J. Torvik, B. Van Zeghbroeck, "Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability ", Materials Science Forum, Vols. 457-460, pp. 1121-1124, 2004
Online since
June 2004
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