Paper Title:
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1133-1136
DOI
10.4028/www.scientific.net/MSF.457-460.1133
Citation
A. M. Strel'chuk, A. A. Lebedev, D.V. Davydov, N.S. Savkina, A. N. Kuznetsov, M. Valakh, V.S. Kiselev, B.N. Romanyuk, C. Raynaud, J.-P. Chante, M. L. Locatelli, "Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation ", Materials Science Forum, Vols. 457-460, pp. 1133-1136, 2004
Online since
June 2004
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2.2 Point and Extended Defects
Abstract:The stability of 6.5 kV pn-diodes is dependent on the absence of critical crystal defects, such as basal plane dislocations. In this paper,...
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