Paper Title:
SiC BJT Technology for Power Switching and RF Applications
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1141-1144
DOI
10.4028/www.scientific.net/MSF.457-460.1141
Citation
A. K. Agarwal, S. H. Ryu, C. Capell, J. Richmond, J. W. Palmour, H. Bartlow, T. P. Chow, S. Scozzie, W. Tipton, S. Baynes, K. A. Jones, "SiC BJT Technology for Power Switching and RF Applications", Materials Science Forum, Vols. 457-460, pp. 1141-1144, 2004
Online since
June 2004
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