Paper Title:
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1145-1148 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1145 |
| Citation |
Pavel A. Ivanov et al., 2004, Materials Science Forum, 457-460, 1145 |
| Online since |
June, 2004 |
| Authors |
Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu |
| Keywords |
Base Current Gain, Bipolar Junction Transistor (BJT), Silicon Carbide (SiC) |
| Price |
US$ 28,- |