Paper Title:
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1145-1148
DOI
10.4028/www.scientific.net/MSF.457-460.1145
Citation
P. A. Ivanov, M. E. Levinshtein, A. K. Agarwal, J. W. Palmour, S. H. Ryu, "Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs", Materials Science Forum, Vols. 457-460, pp. 1145-1148, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Arash Salemi, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling
4.4 HV Devices
Abstract:The influence of varying the emitter-base geometry, i.e., the emitter width (WE), emitter contact–emitter edge distance...
958
Authors: Yun Bai, Cheng Zhan Li, Hua Jun Shen, Yi Dan Tang, Xin Yu Liu
4.5 Other Devices (Sensors, Detectors, ...)
Abstract:The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural...
1036