Paper Title:

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1145-1148
DOI 10.4028/www.scientific.net/MSF.457-460.1145
Citation Pavel A. Ivanov et al., 2004, Materials Science Forum, 457-460, 1145
Online since June, 2004
Authors Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu
Keywords Base Current Gain, Bipolar Junction Transistor (BJT), Silicon Carbide (SiC)
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