Paper Title:
High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1149-1152
DOI
10.4028/www.scientific.net/MSF.457-460.1149
Citation
J. H. Zhang, P. Alexandrov, J. H. Zhao, "High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 457-460, pp. 1149-1152, 2004
Online since
June 2004
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