Paper Title:
Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1153-1156
DOI
10.4028/www.scientific.net/MSF.457-460.1153
Citation
M. S. Mazzola, J. B. Casady, N. Merrett, I. Sankin, W.A. Draper, D. Seale, V. Bondarenko, Y. Koshka, J. Gafford, R. Kelly, "Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits", Materials Science Forum, Vols. 457-460, pp. 1153-1156, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jian H. Zhao, Leonid Fursin, Petre Alexandrov, Larry X. Li, M. Weiner
1161
Authors: Robin L. Kelley, T. Brignac, Michael S. Mazzola, Jeff B. Casady
Abstract:The power junction field effect transistor (JFET) is the second most mature SiC device, after the SiC Schottky diode, and is commonly...
1211
Authors: Andrew Ritenour, David C. Sheridan, Volodymyr Bondarenko, Jeff B. Casady
Abstract:Recently 63 m, 100 m, and 125 m 1200 V normally-off SiC VJFETs have become commercially available and 99% efficiency has been demonstrated...
937
Authors: Akio Takatsuka, Yasunori Tanaka, Koji Yano, Tsutomu Yatsuo, Kazuo Arai
Chapter 10: Device and Application
Abstract:We investigated the short-circuit capabilities of 1.2 kV normally-off SiC buried gate static induction transistors (SiC-BGSITs). The maximum...
962