Paper Title:
1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1157-1160
DOI
10.4028/www.scientific.net/MSF.457-460.1157
Citation
L. Fursin, L. X. Li, J. H. Zhao, "1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization ", Materials Science Forum, Vols. 457-460, pp. 1157-1160, 2004
Online since
June 2004
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$32.00
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