Paper Title:
4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1161-1164
DOI
10.4028/www.scientific.net/MSF.457-460.1161
Citation
J. H. Zhao, L. Fursin, P. Alexandrov, L. X. Li, M. Weiner, "4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET", Materials Science Forum, Vols. 457-460, pp. 1161-1164, 2004
Online since
June 2004
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