Paper Title:
A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1165-1168 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1165 |
| Citation |
Jian Hui Zhang et al., 2004, Materials Science Forum, 457-460, 1165 |
| Online since |
June, 2004 |
| Authors |
Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao |
| Keywords |
Bipolar Junction Transistor (BJT), Darlington, Power Transistor, Silicon Carbide (SiC) |
| Price |
US$ 28,- |