Paper Title:

A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1165-1168
DOI 10.4028/www.scientific.net/MSF.457-460.1165
Citation Jian Hui Zhang et al., 2004, Materials Science Forum, 457-460, 1165
Online since June, 2004
Authors Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao
Keywords Bipolar Junction Transistor (BJT), Darlington, Power Transistor, Silicon Carbide (SiC)
Price US$ 28,-
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