Paper Title:
A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1173-1176
DOI
10.4028/www.scientific.net/MSF.457-460.1173
Citation
J. H. Zhao, J. H. Zhang, P. Alexandrov, L. X. Li, T. Burke, "A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer ", Materials Science Forum, Vols. 457-460, pp. 1173-1176, 2004
Online since
June 2004
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