Paper Title:
Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1177-1180
DOI
10.4028/www.scientific.net/MSF.457-460.1177
Citation
A. Kerlain, E. Morvan, C. Dua, N. Caillas, C. Brylinski, "Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs", Materials Science Forum, Vols. 457-460, pp. 1177-1180, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ho Young Cha, Christopher I. Thomas, Goutam Koley, Lester F. Eastman, Michael G. Spencer
749
Authors: Maciej Wolborski, Mietek Bakowski, Viljami Pore, Mikko Ritala, Markku Leskelä, Adolf Schöner, Anders Hallén
Abstract:Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001}...
701
Authors: Akira Nakajima, Shuichi Yagi, Mitsuaki Shimizu, Kazuhiro Adachi, Hajime Okumura
Abstract:The mechanism of drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. Current collapse was...
1035
Authors: Per Åke Nilsson, Mattias Sudow, Fredrik Allerstam, Kristoffer Andersson, Einar Ö. Sveinbjörnsson, Hans Hjelmgren, Niklas Rorsman
Abstract:Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using...
1103
Authors: Sung Jin Cho, Cong Wang, Won Sang Lee, Nam Young Kim
Thin Films
Abstract:Double passivation layers, Si3N4 on Si3N4 (Si3N4 /...
1793