Paper Title:
Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1181-1184
DOI
10.4028/www.scientific.net/MSF.457-460.1181
Citation
H. J. Na, D. H. Kim, S. Y. Jung, I. B. Song, M. Y. Um, H. K. Song, J. K. Jeong, J. B. Lee, H. J. Kim, "Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation ", Materials Science Forum, Vols. 457-460, pp. 1181-1184, 2004
Online since
June 2004
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