Paper Title:
Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1185-1188
DOI
10.4028/www.scientific.net/MSF.457-460.1185
Citation
M. Gassoumi, N. Sghaier, I. Dermoul, F. Chekir, H. Maaref, J. M. Bluet, G. Guillot, E. Morvan, O. Noblanc, C. Dua, C. Brylinski, "Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates ", Materials Science Forum, Vols. 457-460, pp. 1185-1188, 2004
Online since
June 2004
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