Paper Title:
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1197-1200
DOI
10.4028/www.scientific.net/MSF.457-460.1197
Citation
L. X. Li, J. H. Zhao, "Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC ", Materials Science Forum, Vols. 457-460, pp. 1197-1200, 2004
Online since
June 2004
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