Paper Title:
Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1201-1204
DOI
10.4028/www.scientific.net/MSF.457-460.1201
Citation
P. Friedrichs, R. Elpelt, R. Schörner, H. Mitlehner, D. Stephani, "Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch ", Materials Science Forum, Vols. 457-460, pp. 1201-1204, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: Chang Long Liu, Da Pei Tang
Abstract:Thermal residual stress in diamond film deposited onto Mo substrate was simulated and analyzed comprehensively by using the finite element...
1199
Authors: Mohsen Loh-Mousavi, Amir Masoud Mirhosseini, Ghasem Amirian
Abstract:In recent years, tube hydroforming has been applied in automobile and airplane industries, to decrease weight. In general, the determination...
5
Authors: Ying Wu, Xu Zhou
Chapter 5: Dynamics of Mechanical System
Abstract:For being convenient for researching the dynamic characteristic and the improvement and use of the planar six bar mechanism, for improving...
921
Authors: Xing Bing Ma, Hong Xing Zheng
Chapter 6: Communication and Network
Abstract:A wide-band antenna coupling with an elliptical slot was discussed in this paper. To implement the wide band operation, an elliptical ring...
1594