Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

Journal Materials Science Forum (Volumes 457 - 460)
Volume Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1205-1208
DOI 10.4028/www.scientific.net/MSF.457-460.1205
Citation Saptharishi Sriram et al., 2004, Materials Science Forum, 457-460, 1205
Online since June, 2004
Authors Saptharishi Sriram, A. Ward, C. Janke, T.S. Alcorn, H. Hagleitner, Jason Henning, K. Wieber, Jason R. Jenny, Joseph J. Sumakeris, S.T. Allen
Keywords MESFET, Reliability, RF Power, Silicon Carbide (SiC), Trapping
Full Paper PDF Get the full paper by clicking here

First page example

Preview of first page