Paper Title:
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1213-1216
DOI
10.4028/www.scientific.net/MSF.457-460.1213
Citation
J. H. Zhao, K. Tone, L. X. Li, P. Alexandrov, L. Fursin, M. Weiner, "6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs", Materials Science Forum, Vols. 457-460, pp. 1213-1216, 2004
Online since
June 2004
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