Paper Title:
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1225-1228
DOI
10.4028/www.scientific.net/MSF.457-460.1225
Citation
R. Jonsson, Q. Wahab, S. Rudner, "DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors", Materials Science Forum, Vols. 457-460, pp. 1225-1228, 2004
Online since
June 2004
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Price
$32.00
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